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2 edition of Studies of the optical and electrical properties of some dielectric oxide films. found in the catalog.

Studies of the optical and electrical properties of some dielectric oxide films.

Md. Hedayetul Islam

Studies of the optical and electrical properties of some dielectric oxide films.

by Md. Hedayetul Islam

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Published by Brunel University in Uxbridge .
Written in English


Edition Notes

ContributionsBrunel University. Department of Physics.
The Physical Object
Pagination141p. :
Number of Pages141
ID Numbers
Open LibraryOL14468671M

The dielectric/Ag structures were fabricated on glass substrates using various metal oxides as dielectrics and their optical properties were studied through transmittance and ellipsometry measurements. The structures with 10 nm Ag film deposited on various metal oxides (Al2O3, ZrO2, SrTiO3, TiO2, CaCu3Ti4O12, WO3 and HfO2) of 30 nm showed enhancement in transmittance compared to bare . Silicon oxide thin film grown at low temperatures (study, silicon oxide films were deposited at a substrate temperature of ∼ °C by an atomic layer deposition (ALD) process using Bis(ethyl-methyl-amino)silane (BEMAS). BEMAS precursors adsorbed on the growing surface reacted with ozone but not with H Cited by:

  This paper presents the results of an investigation on the dielectric properties and discusses the observed ac and dc electrical characteristics of aluminum oxide thin films. ac properties are deduced from the capacitance measurements at intermediate and high frequencies. Measurements indicate the existence of two relaxation mechanisms. Hopping polarization of charge carriers is Cited by: Downscaling of complementary metal-oxide semiconductor (CMOS) gate stacks requires the introduction of ultra-thin and high-k dielectrics such as HfO layer deposition (ALD) is an excellent technique for producing high-quality high-k ALD, chemical reactions on the substrate surface involve multiple processes that affect the chemical and electrical properties of the.

  A Study on Improvement of Optical/Electrical Properties of Indium-Tin-Oxide Thin Films Prepared by Sol-Gel Process Ar plasma treatment was carried out to reduce the sheet resistance of indium tin oxide (ITO) thin : Deukkyu Hwang, Seungwoo Shin, Hyeondon Kim, Taeil Lee. In so doing, they cover a wide range of topics, including the characterization and investigation of structural, dielectric and piezoelectric properties of ceramic materials, a well as phase transitions, electrical and optical properties and microscopic investigations.


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Studies of the optical and electrical properties of some dielectric oxide films by Md. Hedayetul Islam Download PDF EPUB FB2

Of these films by measuring the contact angle with water with static contact angle goniometer, to study the hydrophilicity of the films. The optical properties of these films would be studied by using UV-VIS Spectrometer.

The dielectric and electrical properties of these films at low frequency range (20 Hz to. Studies of the optical and electrical properties of some dielectric oxide films Author: Islam, M. ISNI: Awarding Body: University of Brunel Current Institution: Brunel University Date of Award: Availability of Full Text.

The dielectric properties of samarium oxide films have been addressed in a few published investigations. The last investigation [10] related to the high frequency range 10– kHz. The aim of the present work is to study Sm 2 O 3 as an optical film and as an insulator in metal–oxidecametal (MOM) by: A type of ferroelectric oxide films, consisting of three PbZrTiO3 stacks with different periodic thicknesses, has been designed and fabricated on F-doped transparent conductive tin oxide substrates by using one single precursor solution and spinning-coating process.

These films exhibit superior ferroelectric, dielectric, and optical : Shimin Li, Shimin Li, Guohong Ma, Chao Wang, Wenchao Zhao, Xiaoshuang Chen, Junhao Chu, Ning Dai, Wa. optical, and electrical properties of the films was investigated by using different techniques such as X-ray diffraction, atomic force microscopy, optical transmittance, and Hall measurement.

The X-ray diffraction (XRD) studies revealed that the films are polycrystalline in nature with cubic structure and there are strong peaks at the direction.

In this study, titanium dioxide/poly(vinyl) alcohol (TiO2/PVA) nanocomposite thin films were prepared by a simple spin-coating method for dielectric applications.

Structural, morphological, optical, and dielectric properties of samples were analyzed by XRD, SEM, AFM, UV-VIS, and dielectric measurements.

The effect of TiO2 nanoparticles on these properties was by: 1. Introduction. The scaling down of CMOS (metal-oxide-semiconductor) technology requires new high-dielectric-constant (high-k) dielectrics to replace the gate of SiO 2, which has a dielectric constant of k = and an optical band gap of als with a dielectric constant higher than that of silicon nitride (k > 7) are classified as high-dielectric-constant (high-k) by: OPTICAL PROPERTIES OF DIELECTRIC AND SEMICONDUCTOR THIN FILMS 3 Analytic solutions can be given if we assume that the incident wave is a pure wave and that the boundary layers are regular.

In more complicated situations, numerical solutions are nec-Cited by: 6. A systematic study of AC electrical properties and dielectric relaxation of polyvinyl alcohol. (PVA)- zinc oxide (ZnO) composite films has been presented in the frequency range 1 Hz– kHz.

when temperature changes from K– K. The films were characterized for structural by: 9. Capacity (or, more strictly, impedance) measurements provide an estimate of the thickness of anodic oxide films. The oxide functions as the dielectric of a parallel-plate condenser of which the.

Studies on ITO films, grown by the above-mentioned deposition techniques, revealed that the electro-optical properties of such films are highly sensitive towards the method of preparation, composition, partial pressure of oxygen, substrate temperature, substrate type, and annealing by: In this study, the optical and the electrical properties of ITO films synthesized by using a DC magnetron sputtering system with an ITO (SnO2: 10 wt.%) target onto a glass, polycarbonate (PC.

The dielectric properties of anodic aluminium oxide films Abstract: Different types of oxide films may be formed on aluminium by anodization depending upon the manufacturing process. In strong acids thick porous films are formed and these may be used to insulate aluminium conductors for by: 4. The optical properties of metal nanoparticles have long been of interest in physical chemistry, starting with Faraday's investigations of colloidal gold in the middle s.

More recently, new lithographic techniques as well as improvements to classical wet chemistry methods have made it possible to synthesize noble metal nanoparticles with a wide range of sizes, shapes, and dielectric by: Dielectric, Ferroelectric, and Optical Properties 35 1 Dielectric, Ferroelectric, and Optical Properties 1 Introduction Dielectric and ferroelectric materials historically have had and continue to have a strong influence on the evolution of today’s electrical engineering, electronics, optics.

piezoelectric, electro-optical and non-linear optical properties []. The crystal structure of LiTaO 3(rhombohedral structure of space group R3c) is an important part to observe the electrical properties in form of dielectric and impedance on thin films [6, ].

Based on literature, the electrical properties of thin film is veryFile Size: KB. During –, Rao and his group [48,49] carried extensive research work on structure and magnetic properties of A 6BO 8oxides. Magnetic properties of these oxides were investigated more extensively than transport properties.

They published a few review articles and chapters in the book on these oxides [50]. optical, chemical, and electrical properties of high performance dielectric materials.

The advent of nanoscale devices in recent years demands that scientists and engineers continue to focus attention on dielectric material design, synthesis, and characterization for enhanced performance, reliability, and manufacturability.

Table I lists many. Chemical complex nature of the polymer films was confirmed by FTIR analysis. The glass transition temperature and melting temperature were analyzed by using the DSC studies.

The optical studies revealed that the polymer films with the lowest activation energy have the highest ionic by: 6. Electrical conduction in undoped and indium-doped ZnO films in as-deposited, vacuum-annealed and oxygen-annealed states has been studied.

The as-deposited and oxygen-annealed films contain a large density (≥ 10 17 m −2) of trap states due to chemisorbed oxygen at the grain role of these trap states has been analyzed in terms of the grain boundary carrier trapping by:.

J. Phys. D: Appl. Phys. 45 () L Y Liang et al Figure 2. Spectroscopic ellipsometry spectra of the imaginary part ε 2 and real part ε 1 (the inset) of the dielectric constants of SnO films with different Y contents.

Table 1. The ε 1 value at λ = nm, the optical band gap E g and the averaged transparency T of the thin films with different Y by: Vanadium oxide thin films were grown on both quartz and Si() substrates, utilizing a pulsed RF magnetron sputtering technique at room temperature with the RF powers at W to W.

The corresponding thicknesses of the films were increased from nm to nm and 21 nm to nm as the RF power was increaseCited by: ; DOI: /IPFA Study on transparent amorphous indium oxide thin film transistors technology @article{ChangStudyOT, title={Study on transparent amorphous indium oxide thin film transistors technology}, author={Chih-Hsiang Chang and Yu-Chia Lai and Yang-Shun Fan and Che-Chia Chang and Po-Tsun Liu}, journal={ IEEE 22nd International Symposium on the .